Ulsan, South Korea

Yu-Jung Jung

This inventor holds 1 USPTO granted patent. Top assignee: Ulsan National Institute of Science and Technology. Active years: 2020.

IDiyas Innovation Intelligence. (2026). Inventor Profile: Yu-Jung Jung. Retrieved from https://idiyas.com/inventor/yu-jung-jung

Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile


% Patents Active = 100.0

Average Co-Inventor Count = 4.0

ph-index = 1


Company Filing History:


Years Active: 2020

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1 patent (USPTO):Explore Patents

Title: Yu-Jung Jung: Innovator in Plasma Wave Technology

Introduction

Yu-Jung Jung is a prominent inventor based in Ulsan, South Korea. He has made significant contributions to the field of plasma wave technology, particularly through his innovative methods for evaluating device performance.

Latest Patents

Yu-Jung Jung holds 1 patent for a performance evaluation method of suspended channel plasma wave transistors. This patent provides a method for assessing the performance of a suspended channel plasma wave device (PWD) to evaluate its terahertz emission potential. The method involves setting an electron drift velocity as the x-axis, a plasma wave velocity as the y-axis, and determining device operation by generating a design window based on plasma wave generation conditions.

Career Highlights

Yu-Jung Jung is affiliated with the Ulsan National Institute of Science and Technology, where he continues to advance research in plasma wave technology. His work has garnered attention for its potential applications in various technological fields.

Collaborations

Some of his notable coworkers include Kyung Rok Kim and Jong Yul Park, who contribute to the collaborative research environment at the Ulsan National Institute of Science and Technology.

Conclusion

Yu-Jung Jung's innovative approach to evaluating plasma wave devices positions him as a key figure in advancing this technology. His contributions are likely to have a lasting impact on the field.

Profile summary based on public USPTO records.
Data Sources: USPTO Patent Grant XML, Patent Center, EPO & CIPO • Normalized by IDiyas Innovation Graph. Methodology & provenance architecturePlease report any incorrect information to [email protected]
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