Hsinchu, Taiwan

Yu-Hung Chang

This inventor holds 1 USPTO granted patent. Top assignee: Lite-On Semiconductor Corporation. Active years: 2018.

IDiyas Innovation Intelligence. (2026). Inventor Profile: Yu-Hung Chang. Retrieved from https://idiyas.com/inventor/yu-hung-chang-9qjmqtrd

Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile

Calculating rank

% Patents Active = 100.0

Average Co-Inventor Count = 5.0

ph-index = 1


Company Filing History:


Years Active: 2018

Loading Chart...
1 patent (USPTO):Explore Patents

Title: Yu-Hung Chang: Innovator in Diode Technology

Introduction

Yu-Hung Chang is a prominent inventor based in Hsinchu, Taiwan. He is known for his contributions to semiconductor technology, particularly in the development of diode devices. His innovative work has led to the filing of a patent that showcases his expertise in this field.

Latest Patents

Yu-Hung Chang holds a patent for a diode device and its manufacturing method. The patent describes a diode device that includes a substrate, an epitaxial layer, a trench gate structure, a Schottky diode structure, and a termination structure. The active region and termination region are defined within the epitaxial layer. The Schottky diode structure and trench gate structure are located in the active region, while the termination structure is situated in the termination region. The termination structure features a termination trench formed in the epitaxial layer, a termination insulating layer, a first spacer, a second spacer, and a first doped region. The termination insulating layer is conformingly formed on the inner walls of the termination trench, and the first and second spacers are positioned on the two sidewalls of the termination trench. The first doped region, formed beneath the termination trench, has a conductive type that is reverse to that of the epitaxial layer.

Career Highlights

Yu-Hung Chang is currently employed at Lite-On Semiconductor Corporation, where he continues to advance his research and development efforts in semiconductor technology. His work has significantly contributed to the field, particularly in the area of diode devices.

Collaborations

Some of his notable coworkers include Shih-Han Yu and Sung-Ying Tsai, who collaborate with him on various projects within the semiconductor industry.

Conclusion

Yu-Hung Chang's innovative contributions to diode technology and his active role at Lite-On Semiconductor Corporation highlight his importance in the field of semiconductor research. His patent reflects his commitment to advancing technology and improving diode manufacturing methods.

Profile summary based on public USPTO records.
Data Sources: USPTO Patent Grant XML, Patent Center, EPO & CIPO • Normalized by IDiyas Innovation Graph. Methodology & provenance architecturePlease report any incorrect information to [email protected]
Loading…