Yu-Hsiang Hung

Title: Yu-Hsiang Hung: Innovator in Metal Oxide Semiconductor Technology

Introduction

Yu-Hsiang Hung is a prominent inventor based in Kaohsiung, Taiwan. He has made significant contributions to the field of semiconductor technology, particularly through his innovative methods for creating metal oxide semiconductor devices. His work is recognized for its potential to enhance the performance and efficiency of electronic components.

Latest Patents

One of Yu-Hsiang Hung's notable patents is titled "Method for making a metal oxide semiconductor device." This patent describes a method that involves forming an insulator layer on a semiconductor substrate. The insulator layer includes a titanium dioxide film with a surface that has hydroxyl groups formed thereon. Additionally, the method includes forming an aluminum cap film on the surface of the titanium dioxide film and conducting an annealing operation at a temperature sufficient to allow the formation of active hydrogen atoms. This process enables hydrogen passivation of oxide traps in the titanium dioxide film, enhancing its functionality.

Career Highlights

Yu-Hsiang Hung is affiliated with the National Sun Yat-sen University in Kaohsiung, where he contributes to research and development in semiconductor technology. His academic background and research initiatives have positioned him as a key figure in advancing semiconductor innovations.

Collaborations

Yu-Hsiang Hung has collaborated with esteemed colleagues such as Ming-Kwei Lee and Jung-Jie Huang. These partnerships have fostered a collaborative environment that encourages the exchange of ideas and advancements in semiconductor research.

Conclusion

In summary, Yu-Hsiang Hung is a distinguished inventor whose work in metal oxide semiconductor technology has the potential to significantly impact the electronics industry. His innovative methods and collaborations continue to drive advancements in this critical field.