National Sun Yat-Sen University of Kaohsiung

Yu-Hsiang Hung

Ming-Kwei Lee

Jung-Jie Huang

A method for making a MOS device includes: forming an insulator layer on a semiconductor substrate, the insulator layer including a titanium dioxide film that has a surface with hydroxyl groups formed thereon; and forming an aluminum cap film on the surface of the titanium dioxide film, and conducting annealing operation of the aluminum cap film at an annealing temperature sufficient to permit formation of active hydrogen atoms through reaction of the aluminum cap film and the hydroxyl groups, thereby enabling hydrogen passivation of oxide traps in the titanium dioxide film through diffusion of the active hydrogen atoms into the titanium dioxide film.

Growing community of inventors

Kaohsiung, Taiwan

Yu-Hsiang Hung