Company Filing History:
3 out of 499 
1 out of 5 
1 out of 4,316 
Years Active: 2019-2025
Title: Yu-Cheng Lin: Innovator in Memory Technology
Introduction
Yu-Cheng Lin is a prominent inventor based in Taipei, Taiwan. He has made significant contributions to the field of memory technology, holding a total of five patents. His innovative work focuses on enhancing the performance and efficiency of resistive random access memory units.
Latest Patents
One of Yu-Cheng Lin's latest patents is a resistive random access memory unit with a one-way conduction characteristic and its associated fabricating method. This method involves several steps, including an initializing step, a forming step, and a reverse resetting step. The initializing step provides the resistive random access memory unit, while the forming step applies a setting voltage on a lower metal layer, transforming the unit to a low resistive state. The reverse resetting step couples the lower metal layer to ground voltage and applies a resetting voltage to the upper metal layer, resulting in a one-way conduction state. Notably, the forward reading current is significantly greater than the reverse reading current, with a ratio of less than 3000 times. Another patent involves a circuit board that includes a dielectric layer and a circuit layer, designed to optimize space and functionality.
Career Highlights
Throughout his career, Yu-Cheng Lin has worked with notable companies, including Unimicron Technology Corporation and Far Eastern Memorial Hospital. His experience in these organizations has allowed him to develop and refine his innovative ideas in memory technology.
Collaborations
Yu-Cheng Lin has collaborated with several talented individuals in his field, including Ching-Hao Huang and Ho-Shing Lee. These collaborations have contributed to the advancement of his research and inventions.
Conclusion
Yu-Cheng Lin's contributions to memory technology through his patents and collaborations highlight his role as an influential inventor. His work continues to impact the industry and pave the way for future innovations in memory systems.