Norwood, MA, United States of America

Yu Cao

This inventor holds 1 USPTO granted patent and 4 published patent applications. Top assignee: Iqe Kc, LLC. Active years: 2015.

IDiyas Innovation Intelligence. (2026). Inventor Profile: Yu Cao. Retrieved from https://idiyas.com/inventor/yu-cao-67ng4z56

Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile

USPTO Granted Patents = 1 

% Patents Active = 100.0

Average Co-Inventor Count = 3.0

ph-index = 1

Forward Citations = 2(Granted Patents)


Company Filing History:


Years Active: 2015

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1 patent (USPTO):Explore Patents

Title: Yu Cao - Innovator in High-Electron-Mobility Transistor Technology.

Introduction

Yu Cao is a prominent inventor based in Norwood, MA (US). He has made significant contributions to the field of semiconductor technology, particularly in the development of high-electron-mobility transistors (HEMTs). His innovative work has led to the filing of a patent that showcases his expertise and creativity in this area.

Latest Patents

Yu Cao holds a patent for a HEMT structure with an iron-doping-stop component and methods of forming it. This patent describes an iron-doped high-electron-mobility transistor structure that includes a substrate, a nucleation layer over the substrate, and a buffer layer over the nucleation layer. The gallium-nitride buffer layer features an iron-doping-stop layer, which has a concentration of iron that decreases from a juncture with an iron-doped component of the buffer layer. This layer is formed at a lower temperature compared to the temperature at which the iron-doped component is created. The structure also includes a channel layer over the buffer layer and a carrier-supplying barrier layer formed over the channel layer. Yu Cao's patent represents a significant advancement in HEMT technology.

Career Highlights

Throughout his career, Yu Cao has demonstrated a strong commitment to innovation in semiconductor technology. His work has not only contributed to the advancement of HEMTs but has also positioned him as a key figure in the field. He is associated with Iqe Kc, LLC, where he continues to develop cutting-edge technologies.

Collaborations

Yu Cao has collaborated with notable professionals in the industry, including Oleg Laboutin and Wayne Johnson. These collaborations have further enhanced his research and development efforts, leading to impactful innovations in semiconductor technology.

Conclusion

Yu Cao is a distinguished inventor whose work in high-electron-mobility transistors has made a lasting impact on the field of semiconductor technology. His innovative patent reflects his expertise and dedication to advancing technology.

Profile summary based on public USPTO records.
Data Sources: USPTO Patent Grant XML, Patent Center, EPO & CIPO • Normalized by IDiyas Innovation Graph. Methodology & provenance architecturePlease report any incorrect information to [email protected]
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