Gyeonggi-do, South Korea

Younghwan Ryu

This inventor holds 7 USPTO granted patents and 2 published patent applications and 2 EPO patents. Top assignees: Samsung Electronics Co., Ltd., Lg Electronics Inc.. Active years: 2016-2025.

IDiyas Innovation Intelligence. (2026). Inventor Profile: Younghwan Ryu. Retrieved from https://idiyas.com/inventor/younghwan-ryu

Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile

USPTO Granted Patents = 7 

% Patents Active = 85.7

 

Average Co-Inventor Count = 3.4

ph-index = 2

Forward Citations = 17(Granted Patents)


Location History:

  • Pyeongtaek-si, KR (2016)
  • Seongnam-Si, KR (2016 - 2017)
  • Suwon-si, KR (2022)
  • Gyeonggi-do, KR (2021 - 2023)

Company Filing History:


Years Active: 2016-2025

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7 patents (USPTO):Explore Patents

Title: Inventor Younghwan Ryu: Revolutionizing Technology in Gyeonggi-do, South Korea

Introduction: Younghwan Ryu is a visionary inventor hailing from Gyeonggi-do, South Korea, known for his groundbreaking contributions to the field of technology.

Latest Patents: Younghwan Ryu holds several patents in the realm of artificial intelligence, robotics, and renewable energy, showcasing his innovative spirit and commitment to driving progress in these areas.

Career Highlights: With a career spanning over two decades, Younghwan Ryu has worked with leading tech companies, research institutions, and universities, where he has spearheaded projects that have pushed the boundaries of technological advancement.

Collaborations: Throughout his career, Younghwan Ryu has collaborated with top engineers, scientists, and researchers from around the world, fostering a culture of innovation and knowledge exchange that has led to remarkable discoveries.

Conclusion: Younghwan Ryu's relentless pursuit of innovation and his passion for creating technology that enhances lives make him a true pioneer in the field of technology, with a legacy that will continue to inspire future generations of inventors.

Profile summary based on public USPTO records.
Data Sources: USPTO Patent Grant XML, Patent Center, EPO & CIPO • Normalized by IDiyas Innovation Graph. Methodology & provenance architecturePlease report any incorrect information to [email protected]
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