This inventor holds 1 USPTO granted patent. Top assignee: Sungkyunkwan University. Active years: 2022.
Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile
Company Filing History:
Years Active: 2022
Title: Youngdae Yun: Inventor in Oxide Semiconductor Manufacturing
Introduction
Youngdae Yun is an inventor based in Hwaseong, South Korea. His work includes a patented method for manufacturing oxide semiconductors.
Latest Patents
Yun is associated with 1 patent, titled “Method of Manufacturing Oxide Semiconductor.” The method involves immersing a substrate in a solution containing a metal precursor and hydroxyl ions, then applying voltage to form a metal oxide on the substrate. The solution also contains a surfactant, which can be used to control the direction of crystal growth.
Career Highlights
Yun is associated with Sungkyunkwan University. His patent describes an approach to forming metal oxide on a substrate through a solution-based process.
Collaborations
Yun’s listed coworkers include Dongsu Kim and Joosung Kim.
Conclusion
Youngdae Yun’s patent focuses on controlling metal oxide crystal growth during oxide semiconductor manufacturing, reflecting his work in materials and semiconductor processes.
Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile