Ansan, South Korea

Young Seg Choi

This inventor holds 1 USPTO granted patent. Top assignee: Nesscap Co., Ltd.. Active years: 2020.

IDiyas Innovation Intelligence. (2026). Inventor Profile: Young Seg Choi. Retrieved from https://idiyas.com/inventor/young-seg-choi

Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile


% Patents Active = 100.0

Average Co-Inventor Count = 7.0

ph-index = 1


Company Filing History:


Years Active: 2020

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1 patent (USPTO):Explore Patents

Title: Young Seg Choi: Innovator in Electric Double-Layer Devices

Introduction

Young Seg Choi is a notable inventor based in Ansan-si, South Korea. He has made significant contributions to the field of electric double-layer devices. His innovative approach has led to the development of a unique patent that enhances the lifespan of these devices.

Latest Patents

Young Seg Choi holds a patent for an electric double-layer device. This device includes a urethane potting unit designed to fill the gaps between the terminals and their respective through holes. The aluminum terminals are anodized to form an aluminum oxide film, which significantly increases the lifespan of the device. This innovation showcases his commitment to improving technology in the field.

Career Highlights

Choi is currently associated with Nesscap Co., Ltd., where he continues to work on advancements in energy storage solutions. His expertise in electric double-layer devices has positioned him as a key player in the industry. With a patent portfolio that includes 1 patent, he is recognized for his contributions to technology.

Collaborations

Young Seg Choi collaborates with talented individuals such as Na Ri Shin and Sung Wook Yoo. Their combined efforts contribute to the innovative environment at Nesscap Co., Ltd.

Conclusion

Young Seg Choi's work in electric double-layer devices exemplifies the spirit of innovation. His contributions are paving the way for advancements in energy storage technology.

Profile summary based on public USPTO records.
Data Sources: USPTO Patent Grant XML, Patent Center, EPO & CIPO • Normalized by IDiyas Innovation Graph. Methodology & provenance architecturePlease report any incorrect information to [email protected]
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