Young-ki Ha

Title: Young-ki Ha: Innovating CMOS Gate Electrode Technology

Introduction

Young-ki Ha is a notable inventor based in Changwon, South Korea, recognized for his significant contributions to semiconductor technology. He currently works at Samsung Electronics Co., Ltd., where he has developed innovative solutions that enhance the performance of CMOS transistors.

Latest Patents

Young-ki Ha holds a patent for "CMOS gate electrode using selective growth and a fabrication method thereof." This invention describes a CMOS gate electrode created with a selective growth method, where a first gate pattern of polysilicon germanium (poly-SiGe) is utilized on a PMOS region of a semiconductor substrate. Concurrently, a second gate pattern of polysilicon is selectively grown from an underlying layer. Notably, the use of poly-SiGe for the PMOS region does not compromise the performance of the NMOS region, leading to enhanced overall characteristics of the CMOS transistor.

Career Highlights

Throughout his career at Samsung Electronics Co., Ltd., Young-ki Ha has demonstrated remarkable expertise in semiconductor fabrication techniques. His innovative approach to CMOS technology signifies his commitment to enhancing electronic devices’ performance and reliability.

Collaborations

Young-ki has collaborated with esteemed colleagues such as Hwa-sung Rhee and Geum-Jong Bae. Their teamwork exemplifies the spirit of innovation at Samsung Electronics Co., Ltd., as they collectively strive to push the boundaries of semiconductor technology.

Conclusion

In summary, Young-ki Ha stands out as a significant inventor in the realm of semiconductor technology. His contributions through his patent at Samsung Electronics Co., Ltd. reflect a dedication to advancing CMOS transistor performance. As technology continues to evolve, inventors like Young-ki play a crucial role in shaping a more efficient and innovative future.