Icheon, South Korea

Young-In Bae

This inventor holds 1 USPTO granted patent and 1 published patent application. Top assignee: Skhynix Inc.. Active years: 2025.

IDiyas Innovation Intelligence. (2026). Inventor Profile: Young-In Bae. Retrieved from https://idiyas.com/inventor/young-in-bae-02ve64zr

Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile

Calculating rank
USPTO Granted Patents = 1 

% Patents Active = 100.0

Average Co-Inventor Count = 4.0

ph-index = 1


Company Filing History:


Years Active: 2025

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1 patent (USPTO):Explore Patents

Title: Young-In Bae: Innovator in Semiconductor Technology

Introduction

Young-In Bae is a prominent inventor based in Icheon, South Korea. He has made significant contributions to the field of semiconductor technology. His innovative work has led to the development of a unique method for fabricating semiconductor devices.

Latest Patents

Young-In Bae holds 1 patent for his invention titled "Semiconductor device and method for fabricating the same." This patent describes a method that includes providing a substrate, forming a first stacked structure over the substrate, and creating a series of memory cells. The process involves forming insulating layers and ensuring that the semiconductor device has enhanced performance characteristics.

Career Highlights

Young-In Bae is currently employed at SK Hynix Inc., a leading company in the semiconductor industry. His work at SK Hynix has allowed him to focus on advancing semiconductor technologies and improving device fabrication methods.

Collaborations

Young-In Bae collaborates with Nam Joo Kim, a talented female engineer in the field. Their partnership exemplifies the importance of teamwork in driving innovation within the semiconductor sector.

Conclusion

Young-In Bae's contributions to semiconductor technology highlight his role as an influential inventor. His innovative methods and collaboration with skilled professionals continue to shape the future of the industry.

Profile summary based on public USPTO records.
Data Sources: USPTO Patent Grant XML, Patent Center, EPO & CIPO • Normalized by IDiyas Innovation Graph. Methodology & provenance architecturePlease report any incorrect information to [email protected]
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