Cheonan, South Korea

Young Hyo Kim

This inventor holds 1 USPTO granted patent. Top assignee: Semes Co., Ltd.. Active years: 2025.

IDiyas Innovation Intelligence. (2026). Inventor Profile: Young Hyo Kim. Retrieved from https://idiyas.com/inventor/young-hyo-kim-mowbmjxw

Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile

Calculating rank

% Patents Active = 100.0

Average Co-Inventor Count = 5.0

ph-index = 1


Company Filing History:


Years Active: 2025

Loading Chart...
1 patent (USPTO):Explore Patents

Title: Young Hyo Kim: Innovator in Substrate Treatment Technology

Introduction

Young Hyo Kim is a notable inventor based in Cheonan-si, South Korea. He has made significant contributions to the field of substrate treatment technology. His innovative approach has led to the development of a unique apparatus that enhances the efficiency of substrate processing.

Latest Patents

Young Hyo Kim holds 1 patent for his invention titled "Apparatus for treating substrate." This apparatus includes a liquid supply unit designed to deliver light-emission sources and/or a treating liquid onto the substrate. Additionally, it features a voltage application unit that applies voltage to the substrate, optimizing the treatment process.

Career Highlights

Kim is currently employed at Semes Co., Ltd., a company recognized for its advancements in semiconductor manufacturing equipment. His work at Semes has allowed him to focus on innovative solutions that improve substrate treatment methods.

Collaborations

Throughout his career, Young Hyo Kim has collaborated with talented individuals such as Jae Hyun You and Sang Joon Lee. These partnerships have fostered a creative environment that encourages the development of cutting-edge technologies.

Conclusion

Young Hyo Kim's contributions to substrate treatment technology exemplify his dedication to innovation. His patent and work at Semes Co., Ltd. highlight his role as a key figure in advancing this important field.

Profile summary based on public USPTO records.
Data Sources: USPTO Patent Grant XML, Patent Center, EPO & CIPO • Normalized by IDiyas Innovation Graph. Methodology & provenance architecturePlease report any incorrect information to [email protected]
Loading…