Namyangju, South Korea

Young Hwan Hyeon

This inventor holds 1 USPTO granted patent and 4 published patent applications. Top assignee: Db Hitek Co., Ltd.. Active years: 2025.

IDiyas Innovation Intelligence. (2026). Inventor Profile: Young Hwan Hyeon. Retrieved from https://idiyas.com/inventor/young-hwan-hyeon

Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile

USPTO Granted Patents = 1 

% Patents Active = 100.0

Average Co-Inventor Count = 4.0

ph-index = 1


Company Filing History:


Years Active: 2025

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1 patent (USPTO):Explore Patents

Title: Young Hwan Hyeon: Innovator in SPAD Technology

Introduction

Young Hwan Hyeon is a notable inventor based in Namyangju, South Korea. He has made significant contributions to the field of photonics, particularly through his work on single-photon avalanche diodes (SPADs). His innovative approach has led to advancements that enhance the functionality and efficiency of these devices.

Latest Patents

Young Hwan Hyeon holds a patent for a SPAD structure. This invention provides a unique design that includes an isolation structure for electrical and/or physical separation between a pixel area and a logic area. This innovation is crucial for improving the performance of SPADs in various applications.

Career Highlights

He is currently employed at Db Hitek Co., Ltd., where he continues to develop cutting-edge technologies. His work at the company has positioned him as a key player in the advancement of semiconductor technologies.

Collaborations

Young Hwan Hyeon has collaborated with notable colleagues, including Jong Man Kim and Byoung Soo Choi. These partnerships have fostered a creative environment that encourages innovation and the sharing of ideas.

Conclusion

Young Hwan Hyeon's contributions to SPAD technology exemplify the impact of innovative thinking in the field of photonics. His work continues to influence advancements in this critical area of technology.

Profile summary based on public USPTO records.
Data Sources: USPTO Patent Grant XML, Patent Center, EPO & CIPO • Normalized by IDiyas Innovation Graph. Methodology & provenance architecturePlease report any incorrect information to [email protected]
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