This inventor holds 2 USPTO granted patents and 1 published patent application. Active years: 2023-2025.
Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile
Years Active: 2023-2025
Title: Young-Hee Jung: DRAM and Memory-Termination Patents.
Introduction
Young-Hee Jung is a woman inventor associated with Hwaseong, South Korea. The information provided lists 2 patents in her portfolio, including work on DRAM devices and on-die termination (ODT) resistor adjustment.
Latest Patents
Jung’s latest listed patent is titled “DRAM Device and ODT Resistor Value Adjustment Method and Computer Program for the Same.” The invention describes a DRAM device with at least one DRAM module and a memory controller. The controller measures the resistance of an ODT resistor associated with a rank, chipset, or DQ, then uses that measurement to set the resistance value for the corresponding component. The disclosure also covers a method for setting ODT resistance and a computer program for carrying it out.
Career Highlights
The available information highlights Jung’s patent work in memory-system design, particularly techniques for measuring and adjusting ODT resistance in DRAM. These techniques address resistance settings at different levels of a memory system, including ranks, chipsets, and DQs.
Collaborations
Sang-Seok Kang and Sun-Young Lee are identified as Jung’s coworkers. The information provided does not specify their roles in the listed patent.
Conclusion
Young-Hee Jung’s listed patent work focuses on DRAM and ODT resistance adjustment, reflecting an inventive contribution to memory-device configuration and control.
Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile