DaeJeon, South Korea

Young Chong Lee

This inventor holds 1 USPTO granted patent. Top assignee: Lg Semicon. Active years: 1998.

IDiyas Innovation Intelligence. (2026). Inventor Profile: Young Chong Lee. Retrieved from https://idiyas.com/inventor/young-chong-lee-k3mdnnit

Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile


% Patents Active = 100.0

Average Co-Inventor Count = 1.0

ph-index = 1

Forward Citations = 76(Granted Patents)


Company Filing History:


Years Active: 1998

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1 patent (USPTO):Explore Patents

Title: Young Chong Lee: Innovator in Semiconductor Technology

Introduction

Young Chong Lee is a prominent inventor based in Daejon, South Korea. He has made significant contributions to the field of semiconductor technology, particularly through his innovative methods for substrate treatment.

Latest Patents

Young Chong Lee holds a patent for a method titled "Pretreatment of Semiconductor Substrate." This patent outlines a process for pretreating a semiconductor surface, which includes placing a titanium nitride substrate in a reaction chamber and subjecting it to vacuum. The method involves purging the chamber with an inert gas, treating the substrate with a reaction gas, and charging a reducing gas along with a source gas for deposition material. This process enhances the nucleation rate of deposition material and increases the number of nucleation sites, resulting in a thin film with uniform thickness and high density.

Career Highlights

Young Chong Lee is currently associated with LG Semicon, where he applies his expertise in semiconductor technology. His work has been instrumental in advancing the methods used in the semiconductor industry.

Collaborations

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Conclusion

Young Chong Lee's innovative approach to semiconductor substrate treatment exemplifies the advancements being made in the field. His contributions continue to influence the development of high-quality semiconductor materials.

Profile summary based on public USPTO records.
Data Sources: USPTO Patent Grant XML, Patent Center, EPO & CIPO • Normalized by IDiyas Innovation Graph. Methodology & provenance architecturePlease report any incorrect information to [email protected]
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