Gyeonggi-do, South Korea

Young Bae Kim

This inventor holds 1 USPTO granted patent. Top assignee: Db Hitek Co., Ltd.. Active years: 2026.

IDiyas Innovation Intelligence. (2026). Inventor Profile: Young Bae Kim. Retrieved from https://idiyas.com/inventor/young-bae-kim-q3ql4t24

Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile


Average Co-Inventor Count = 1.0


Company Filing History:


Years Active: 2026

Loading Chart...
1 patent (USPTO):Explore Patents

Title: Young Bae Kim and His Power Semiconductor Device.

Introduction

Young Bae Kim is an inventor associated with Gyeonggi-do, South Korea, and DB HiTek Co., Ltd. His patent work includes a power semiconductor device designed to manage high- and low-voltage operation.

Latest Patents

The provided information identifies one patent for Kim: Power semiconductor device. The invention describes a high-voltage unit, a low-voltage unit, and a capacitor that supplies power to the high-voltage unit while it operates. A switching unit connects the capacitor to a driving power source to charge it during low-voltage operation, while preventing the high-voltage unit from connecting to that source during high-voltage operation. A resistance unit reduces the voltage to below the switching unit’s breakdown voltage. Kim is credited with 1 patent in the supplied data.

Career Highlights

Kim’s listed patent reflects work on power semiconductor circuitry, particularly voltage management and protection of switching components. The supplied information associates him with DB HiTek Co., Ltd.

Collaborations

Hong Sik Shin is identified as Kim’s coworker. The provided details do not specify whether Shin collaborated on the patent.

Conclusion

Young Bae Kim’s listed invention addresses voltage control and component protection in a power semiconductor device, highlighting his contribution to semiconductor technology.

Profile summary based on public USPTO records.
Data Sources: USPTO Patent Grant XML, Patent Center, EPO & CIPO • Normalized by IDiyas Innovation Graph. Methodology & provenance architecturePlease report any incorrect information to [email protected]
Loading…