Cheongju-si, South Korea

Youn-Jang Kim


Average Co-Inventor Count = 4.0

ph-index = 1

Forward Citations = 2(Granted Patents)


Location History:

  • Chungcheongbuk-do, KR (2013)
  • Cheongju-si, KR (2019)

Company Filing History:


Years Active: 2013-2019

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2 patents (USPTO):Explore Patents

Title: Youn-Jang Kim: Innovator in Nonvolatile Memory Technology

Introduction

Youn-Jang Kim is a prominent inventor based in Cheongju-si, South Korea. He has made significant contributions to the field of nonvolatile memory devices, holding a total of 2 patents. His work focuses on enhancing the reliability and performance of memory technology.

Latest Patents

Youn-Jang Kim's latest patents include an antifuse unit cell of a nonvolatile memory device designed to improve data sense margin. This innovation aims to enhance reliability during read operations. The unit cell features an antifuse with a first terminal positioned between an input terminal and an output terminal, along with a first switching unit connected between the antifuse's second terminal and a ground voltage terminal. This design is crucial for advancing nonvolatile memory technology.

Career Highlights

Youn-Jang Kim is currently employed at Magnachip Semiconductor, Inc., where he continues to develop cutting-edge memory solutions. His expertise in nonvolatile memory devices has positioned him as a key player in the semiconductor industry.

Collaborations

Some of his notable coworkers include Chang-Hee Shin and Ki-Seok Cho, who collaborate with him on various projects within the company.

Conclusion

Youn-Jang Kim's innovative work in nonvolatile memory technology showcases his commitment to advancing the field. His contributions are vital for the future of memory devices, and his patents reflect his expertise and dedication to innovation.

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