Youichiro Numasawa

Title: Youichiro Numasawa: Innovator in Semiconductor Technology

Introduction

Youichiro Numasawa is an accomplished inventor based in Tokyo, Japan. He has made significant contributions to the field of semiconductor technology, specifically focusing on innovations that improve the performance and durability of semiconductor devices.

Latest Patents

Numasawa holds a patent for a novel process of fabricating a semiconductor device that features a nitrogen-containing field effect transistor. This invention is designed for a 1 giga-bit dynamic random access memory device. The patented technology includes a two-layer gate structure, which consists of a lower layer made of nitrogen-containing silicon and an upper layer crafted from refractory metal. Notably, this structure effectively prevents the gate oxide layer from being affected by alkaline metals that could diffuse from the refractory metal, thereby enhancing the overall reliability of the device.

Career Highlights

Currently, Numasawa is associated with NEC Corporation, where he utilizes his expertise to spearhead advancements in semiconductor technologies. His innovative approach to device fabrication has set benchmarks in the industry, showcasing his integral role in the evolution of semiconductor components.

Collaborations

During his career, Numasawa has collaborated with notable colleagues, including Shinji Fujieda and Yoshinao Miura. Together, they have worked on various projects that focus on refining semiconductor processes and enhancing electronic device performance.

Conclusion

Youichiro Numasawa stands out as a visionary in the semiconductor industry. His innovations not only contribute to the technological landscape but also pave the way for future advancements in high-performance electronic devices. His work at NEC Corporation and his collaborative spirit with peers highlight his dedication to pushing the boundaries of semiconductor technology.