This inventor holds 2 USPTO granted patents and 1 published patent application. Top assignee: Samsung Electronics Co., Ltd.. Active years: 2026.
Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile
Company Filing History:
Years Active: 2026
Title: Youbin Kim and Integrated Circuit Innovation
Introduction
Youbin Kim is an inventor based in Suwon-si, South Korea, whose patent work concerns integrated circuit device design. He is associated with Samsung Electronics, where his disclosed inventions address semiconductor structures and backside electrical contacts. His patent portfolio includes 2 patents.
Latest Patents
Kim’s latest listed patent describes an integrated circuit device built around an insulating structure and a source/drain region. The design includes spaced bottom semiconductor sheets, channel regions, and gate lines extending in a direction perpendicular to the spacing between the sheets.
A backside contact structure passes through the insulating structure to reach the bottom surface of the source/drain region. It has two contact portions with widths that change in opposite ways toward the source/drain region: one widens, while the other narrows. This geometry is intended to provide a carefully configured electrical connection within the device.
The supplied information lists the same patent description twice, so it is presented here as one distinct invention rather than as two separate designs.
Career Highlights
Kim’s listed work reflects a focus on integrated circuit architecture, including semiconductor channels, gate lines, source/drain regions, and backside contacts. His association with Samsung Electronics connects his patent activity to a company active in semiconductor technology.
Collaborations
Hyunho Noh and Ilgyou Shin are identified as Kim’s coworkers. The supplied information does not specify whether they collaborated with him on the listed patent.
Conclusion
Youbin Kim’s disclosed patent work centers on integrated circuit structures, particularly a backside contact design that connects to a source/drain region through an insulating structure.
Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile
