Yokohama, Japan

Yoshiyuki Takasu

This inventor holds 1 USPTO granted patent. Top assignee: Kioxia Corporation. Active years: 2024.

IDiyas Innovation Intelligence. (2026). Inventor Profile: Yoshiyuki Takasu. Retrieved from https://idiyas.com/inventor/yoshiyuki-takasu-cac9ydr3

Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile

Calculating rank

% Patents Active = 100.0

Average Co-Inventor Count = 2.0

ph-index = 1


Company Filing History:


Years Active: 2024

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1 patent (USPTO):Explore Patents

Title: Innovations by Yoshiyuki Takasu

Introduction

Yoshiyuki Takasu is a notable inventor based in Yokohama, Japan. He has made significant contributions to the field of semiconductor technology. His work has led to advancements that are crucial for modern electronic devices.

Latest Patents

Yoshiyuki Takasu holds 1 patent related to semiconductor devices. His patent describes a semiconductor device, semiconductor memory device, and a manufacturing method for semiconductor devices. The invention includes first and second conductors, a first insulator, and first and second contacts. The first conductor features a first pad portion, which consists of first and second sub portions. Each of these sub portions has distinct end portions, with specific lengths that optimize the device's functionality.

Career Highlights

Yoshiyuki Takasu is currently employed at Kioxia Corporation, where he continues to innovate in the semiconductor field. His expertise and dedication have made him a valuable asset to the company.

Collaborations

One of his notable coworkers is Fumiharu Nakajima, with whom he has likely collaborated on various projects within the semiconductor domain.

Conclusion

Yoshiyuki Takasu's contributions to semiconductor technology exemplify the importance of innovation in the electronics industry. His patent reflects a commitment to advancing technology that impacts everyday life.

Profile summary based on public USPTO records.
Data Sources: USPTO Patent Grant XML, Patent Center, EPO & CIPO • Normalized by IDiyas Innovation Graph. Methodology & provenance architecturePlease report any incorrect information to [email protected]
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