Hyogo, Japan

Yoshiyuki Haraguti

This inventor holds 1 USPTO granted patent. Top assignee: Mitsubishi Denki Kabushiki Kaisha. Active years: 2001.

IDiyas Innovation Intelligence. (2026). Inventor Profile: Yoshiyuki Haraguti. Retrieved from https://idiyas.com/inventor/yoshiyuki-haraguti

Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile


% Patents Active = 100.0

Average Co-Inventor Count = 6.0

ph-index = 1

Forward Citations = 15(Granted Patents)


Company Filing History:


Years Active: 2001

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1 patent (USPTO):Explore Patents

Title: Yoshiyuki Haraguti: Innovator in Semiconductor Technology

Introduction

Yoshiyuki Haraguti is a notable inventor based in Hyogo, Japan. He has made significant contributions to the field of semiconductor technology, particularly in memory devices. His innovative work has led to the development of a unique static semiconductor memory device.

Latest Patents

Yoshiyuki Haraguti holds 1 patent for his invention of a static semiconductor memory device. This device features a shared contact on the side of a drain active region of each of two load transistors. This design ensures stabilized low voltage operation in a full CMOS type SRAM memory cell that incorporates the shared contact.

Career Highlights

Haraguti is associated with Mitsubishi Electric Corporation, where he has been instrumental in advancing semiconductor technologies. His work has not only contributed to the company's reputation but has also impacted the broader field of electronics.

Collaborations

Throughout his career, Yoshiyuki has collaborated with esteemed colleagues such as Motoi Ashida and Hideaki Nagaoka. These partnerships have fostered innovation and have led to the successful development of various technologies.

Conclusion

Yoshiyuki Haraguti's contributions to semiconductor technology exemplify the spirit of innovation. His work continues to influence the industry and inspire future advancements in memory devices.

Profile summary based on public USPTO records.
Data Sources: USPTO Patent Grant XML, Patent Center, EPO & CIPO • Normalized by IDiyas Innovation Graph. Methodology & provenance architecturePlease report any incorrect information to [email protected]
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