Hyogo, Japan

Yoshiyuki Fujino

This inventor holds 6 USPTO granted patents. Top assignee: Mitsubishi Denki Kabushiki Kaisha. Active years: 1996-1997.

IDiyas Innovation Intelligence. (2026). Inventor Profile: Yoshiyuki Fujino. Retrieved from https://idiyas.com/inventor/yoshiyuki-fujino

Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile

Calculating rank

% Patents Active = 100.0

Average Co-Inventor Count = 6.0

ph-index = 6

Forward Citations = 92(Granted Patents)


Company Filing History:


Years Active: 1996-1997

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6 patents (USPTO):Explore Patents

Title: Innovations by Yoshiyuki Fujino

Introduction

Yoshiyuki Fujino is a notable inventor based in Hyogo, Japan. He has made significant contributions to the field of semiconductor memory devices. With a total of 6 patents to his name, his work has had a considerable impact on the technology industry.

Latest Patents

Fujino's latest patents include advancements in static semiconductor memory devices that feature improved characteristics. One of his innovations involves a delay circuit that delays an internal write control signal to a global write driver. This global write driver is activated in response to the delayed write control signal, allowing it to drive a global write data bus based on internal write data from an input buffer. Additionally, a block write driver is enabled by an internal write control signal and a block selection signal, which drives a local write data bus according to data on the global write data bus. The design also includes a write gate that connects a bit line to the local write data bus based on a column selection signal. The delay circuit ensures that the output of the block write driver remains low for a specified period, reducing the precharge potential of the bit line and consequently lowering the potential amplitude during data writing. This innovation results in a high-speed SRAM with an enlarged write recovery time margin, enhancing both operating characteristics and reliability.

Career Highlights

Fujino is currently associated with Mitsubishi Denki Kabushiki Kaisha, where he continues to develop cutting-edge technologies in semiconductor memory. His work has been instrumental in advancing the capabilities of SRAM devices, making them faster and more reliable.

Collaborations

Fujino has collaborated with notable colleagues such as Toshihiko Hirose and Masayuki Iketani, contributing to various projects that push the boundaries of semiconductor technology.

Conclusion

Yoshiyuki Fujino's contributions to the field of semiconductor memory devices exemplify innovation and dedication. His patents reflect a commitment to enhancing technology, making a lasting impact on the industry.

Profile summary based on public USPTO records.
Data Sources: USPTO Patent Grant XML, Patent Center, EPO & CIPO • Normalized by IDiyas Innovation Graph. Methodology & provenance architecturePlease report any incorrect information to [email protected]
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