Yamato, Japan

Yoshiyouki Inaguma

This inventor holds 1 USPTO granted patent. Top assignee: Korea Institute of Science and Technology. Active years: 1996.

IDiyas Innovation Intelligence. (2026). Inventor Profile: Yoshiyouki Inaguma. Retrieved from https://idiyas.com/inventor/yoshiyouki-inaguma

Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile


% Patents Active = 100.0

Average Co-Inventor Count = 8.0

ph-index = 1

Forward Citations = 2(Granted Patents)


Company Filing History:


Years Active: 1996

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1 patent (USPTO):Explore Patents

Title: Innovations of Yoshiyouki Inaguma

Introduction

Yoshiyouki Inaguma is a notable inventor based in Yamato, Japan. He has made significant contributions to the field of high-frequency dielectric ceramics. His work is recognized for its innovative approach to material compositions.

Latest Patents

Inaguma holds 1 patent for his invention titled "Compositions of high frequency dielectrics." This patent provides compositions of high-frequency dielectric ceramics represented by a specific formula. His invention aims to enhance the performance and efficiency of dielectric materials used in various applications.

Career Highlights

Yoshiyouki Inaguma is affiliated with the Korea Institute of Science and Technology. His role at this prestigious institution has allowed him to engage in cutting-edge research and development in the field of materials science. His expertise in dielectric ceramics has positioned him as a key figure in advancing technology in this area.

Collaborations

Inaguma has collaborated with notable colleagues, including Hyung Jin Jung and Hyun Jin Kim. These partnerships have fostered a collaborative environment that encourages innovation and the sharing of ideas.

Conclusion

Yoshiyouki Inaguma's contributions to high-frequency dielectric ceramics exemplify the impact of innovative thinking in material science. His patent and collaborative efforts highlight the importance of research in advancing technology.

Profile summary based on public USPTO records.
Data Sources: USPTO Patent Grant XML, Patent Center, EPO & CIPO • Normalized by IDiyas Innovation Graph. Methodology & provenance architecturePlease report any incorrect information to [email protected]
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