Company Filing History:
Years Active: 2013-2014
Title: Yoshiya Yoshida: Innovator in Epitaxial Silicon Wafer Technology
Introduction
Yoshiya Yoshida is a prominent inventor based in Tokyo, Japan. He has made significant contributions to the field of semiconductor technology, particularly in the development of epitaxial silicon wafers. With a total of 2 patents to his name, Yoshida's work has had a notable impact on the industry.
Latest Patents
Yoshida's latest patents focus on the creation of an epitaxial silicon wafer that boasts excellent gettering ability. This innovation involves forming a polysilicon layer on the rear face of a silicon crystal substrate that has been doped with phosphorus (P) and germanium (Ge). The process includes growing a silicon epitaxial layer using a chemical vapor deposition (CVD) method on a high-concentration doped substrate. By implementing a polysilicon layer growth step, the number of LPDs caused by stacking faults (SF) on the surface of the epitaxial silicon wafer is significantly reduced. This advancement enhances the overall performance and reliability of silicon wafers in various applications.
Career Highlights
Yoshiya Yoshida is currently associated with Sumco Corporation, a leading company in the semiconductor industry. His expertise and innovative approach have positioned him as a key figure in the development of advanced silicon wafer technologies.
Collaborations
Yoshida has collaborated with notable colleagues in his field, including Tadashi Kawashima and Masahiro Yoshikawa. These partnerships have fostered a collaborative environment that encourages innovation and the sharing of ideas.
Conclusion
Yoshiya Yoshida's contributions to epitaxial silicon wafer technology exemplify his commitment to advancing semiconductor innovations. His patents reflect a deep understanding of material science and engineering, making him a valuable asset to the industry.