Tokyo, Japan

Yoshiteru Keikoin


Average Co-Inventor Count = 5.0

ph-index = 1

Forward Citations = 9(Granted Patents)


Company Filing History:


Years Active: 1977

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1 patent (USPTO):Explore Patents

Title: The Innovations of Yoshiteru Keikoin

Introduction

Yoshiteru Keikoin is a notable inventor based in Tokyo, Japan. He has made significant contributions to the field of semiconductor technology. His work primarily focuses on the development of devices that enhance the efficiency of epitaxial growth processes.

Latest Patents

One of Yoshiteru Keikoin's key patents is for an epitaxial growth device. This device is designed for creating a mixed crystal of IIIb-Vb group intermetallic compound semiconductors. It features a unique mechanism for inverting the reaction gas flow, which is strategically placed between the gallium source and the substrate. The design reduces the height of the device while ensuring that the length of the gas mixing band is sufficiently long. This innovation is crucial for improving the quality and efficiency of semiconductor manufacturing.

Career Highlights

Throughout his career, Yoshiteru Keikoin has worked with prominent companies in the technology sector. He has been associated with Hitachi, Ltd. and Hitachi Electronics Co., Ltd. These experiences have allowed him to refine his skills and contribute to groundbreaking advancements in semiconductor technology.

Collaborations

Yoshiteru Keikoin has collaborated with several talented individuals in his field. Notable coworkers include Kazuhiro Kurata and Kozi Honma. Their collective expertise has played a significant role in the development of innovative technologies.

Conclusion

Yoshiteru Keikoin's contributions to the field of semiconductor technology are noteworthy. His innovative epitaxial growth device exemplifies his commitment to advancing the industry. Through his work and collaborations, he continues to influence the future of semiconductor manufacturing.

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