The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jan. 04, 1977
Filed:
Aug. 12, 1971
Applicant:
Inventors:
Kazuhiro Kurata, Hachioji, JA;
Kozi Honma, Tokyo, JA;
Masahiko Ogirima, Tokyo, JA;
Yuichi Ono, Kokubungi, JA;
Yoshiteru Keikoin, Tokyo, JA;
Assignees:
Hitachi, Ltd., BOTH OF, JA;
Hitachi Electronics Co., Ltd., BOTH OF, JA;
Attorney:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
B05C / ; B01J / ; C23C / ;
U.S. Cl.
CPC ...
118-5 ; 2327 / ; 2329 / ; 118 49 ; 156613 ; 156614 ; 252 / ; 427 87 ;
Abstract
A longitudinal epitaxial growth device for making a mixed crystal of III.sub.b -V.sub.b group intermetallic compound semiconductor in which a means for inverting the reaction gas flow is disposed between the gallium source and the substrate, the height of the device is reduced, and the length of the gas mixing band is made sufficiently long.