Kyoto, Japan

Yoshitaka Sunagawa


Average Co-Inventor Count = 6.0

ph-index = 1

Forward Citations = 8(Granted Patents)


Company Filing History:


Years Active: 2007

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1 patent (USPTO):Explore Patents

Title: Innovating Piezoelectric Devices: The Work of Yoshitaka Sunagawa

Introduction: Yoshitaka Sunagawa, an accomplished inventor based in Kyoto, Japan, has made significant strides in the field of piezoelectric devices. With a focus on creating high-performance components, his contributions to technology are notable for their innovative approaches and practical applications.

Latest Patents: Sunagawa holds a patent for a device titled "Piezoelectric device comprising ultrahighly-oriented aluminum nitride thin film and its manufacturing method." This invention aims to deliver a high-performance piezoelectric element characterized by an aluminum nitride thin film that avoids issues like hillocks, cracks, and peeling. The design incorporates a bottom electrode made from a tungsten (W) layer, which is positioned directly on a substrate, eliminating the need for any adhesive layers. The piezoelectric element boasts a superhigh c-axis orientation, with the thin film's quality evidenced by a rocking curve full width half maximum (RCFWHM) not exceeding 2.5 degrees.

Career Highlights: Sunagawa's career is marked by his dedication to advancing piezoelectric technologies. His work at the National Institute of Advanced Industrial Science and Technology reflects a commitment to innovative research and development. The patents he holds not only showcase his technical expertise but also represent significant advancements in the industry.

Collaborations: Throughout his career, Yoshitaka Sunagawa has collaborated with esteemed colleagues, such as Morito Akiyama and Naohiro Ueno. These collaborations have proven essential in refining and advancing his research, contributing to the overall success of his innovations.

Conclusion: Yoshitaka Sunagawa stands out in the realm of inventors for his groundbreaking work on piezoelectric devices. His patent for a device utilizing ultrahighly-oriented aluminum nitride thin film demonstrates a significant leap forward in technology. As he continues to work with leading institutions and talented individuals, Sunagawa's contributions are set to leave a lasting impact in the field of materials science and engineering.

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