Company Filing History:
Years Active: 1999-2000
Title: **Yoshitaka Ohiso: Innovator in Semiconductor Laser Technology**
Introduction
Yoshitaka Ohiso is a prominent inventor based in Isehara, Japan. He has made significant contributions to the field of semiconductor laser technology. With a total of 2 patents, his work has had a lasting impact on the industry.
Latest Patents
Ohiso's latest patents include a vertical-cavity surface-emitting laser and a method for manufacturing it. This innovative laser consists of first and second semiconductor multi-layered films, an active layer, and third and fourth semiconductor multi-layered films, all piled up on a GaAs substrate in a specific order. The first film is created by alternating layers of Al.sub.x1 Ga.sub.1-x1 As and Al.sub.x2 Ga.sub.1-x2 As. The second film is formed by alternating layers of In.sub.x3 Ga.sub.1-x3 As.sub.y3 P.sub.1-y3 and In.sub.x4 Ga.sub.1-x4 As.sub.y4 P.sub.1-y4. The active layer is an In.sub.x5 Ga.sub.1-x5 As.sub.y5 P.sub.1-y5 layer. The third and fourth films are similarly constructed with alternating layers of In and Al compounds. Each layer's thickness is determined by dividing the emission wavelength by the refractive index and 4.
Career Highlights
Yoshitaka Ohiso is currently associated with Nippon Telegraph and Telephone Corporation, where he continues to innovate in the field of semiconductor technology. His work has been instrumental in advancing the capabilities of vertical-cavity surface-emitting lasers.
Collaborations
Ohiso has collaborated with notable colleagues, including Yoshio Itoh and Chikara Amano, contributing to various projects and advancements in semiconductor technology.
Conclusion
Yoshitaka Ohiso's contributions to semiconductor laser technology exemplify his innovative spirit and dedication to advancing the field. His patents and collaborations continue to influence the industry significantly.