Yoshinori Hatanaka

Title: Innovations of Yoshinori Hatanaka

Introduction

Yoshinori Hatanaka is a prominent inventor based in Hamamatsu, Japan. He has made significant contributions to the field of radiation detection and semiconductor technology. With a total of nine patents to his name, Hatanaka's work has advanced the capabilities of various detection systems.

Latest Patents

Hatanaka's latest patents include a wide range radiation detector and a manufacturing method. This innovative radiation detector utilizes a II-VI compound semiconductor substrate that absorbs radiation of a specific energy. It features a II-VI compound semiconductor layer of a first conductivity type, a metal layer containing group III and group V elements, and a IV semiconductor layer with a second conductivity type. Another notable patent is the ultra-high resolution pixel electrode arrangement structure and signal processing method. This invention addresses sensitivity variations in semiconductor sensor elements used for detecting high-energy x-rays and gamma rays. By proposing a structure that makes capacitances uniform, Hatanaka has improved the reliability of these detection systems.

Career Highlights

Throughout his career, Hatanaka has worked with esteemed organizations such as Shizuoka University and Suzuki Motor Corporation. His experience in these institutions has allowed him to collaborate on various innovative projects and further his research in semiconductor technology.

Collaborations

Hatanaka has collaborated with notable colleagues, including Toru Aoki and Keiichiro Sano. Their combined expertise has contributed to the development of advanced technologies in their respective fields.

Conclusion

Yoshinori Hatanaka's contributions to the field of radiation detection and semiconductor technology are noteworthy. His innovative patents and collaborations have significantly impacted the industry, showcasing his dedication to advancing technology.