Mitsubishi Denki Kabushiki Kaisha

Suzuki Motor Corporation

Murakami Corporation

Shizuoka University

Minolta Company, Ltd.

Yoshinori Hatanaka

Ryo Suzuki

Keiji Watanabe

Masato Saito

Masatoshi Nakamura

Susumu Hoshinouchi

Keiji Fukuyama

Takuya Ohira

Masaya Nomura

Toru Aoki

Minoru Kobayashi

Keiichiro Sano

Yasuhiro Tomita

Sunil Wickramanayaka

Ken Kitamura

Shigekazu Hayashi

Hiroaki Tamamaki

Yoichiro Nakanishi

A radiation detector comprising a II-VI compound semiconductor substrate that absorbs radiation having a first energy, a II-VI compound semiconductor layer of a first conductivity type provided on a main surface of the II-VI compound semiconductor substrate, a metal layer containing at least one of a group III element and a group V element provided on the II-VI compound semiconductor layer, a IV semiconductor layer having a second conductivity type opposite to the first conductivity type provided on the metal layer, and a IV semiconductor substrate that absorbs radiation having a second energy different from the first energy provided on the IV semiconductor layer.

Wide range radiation detector and manufacturing method

When a semiconductor sensor element used for detecting high-energy x-rays and gamma rays and an amplifier are connected via wires, the capacitances vary depending on the wires, thereby causing a sensitivity variation. To solve this, a structure for making the capacitances uniform is proposed. If a staggered arrangement is used for high resolution, the capacitances by wiring are different from element to element, so dummy sensor mounting sections () are provided to electrode sections () to make the capacitance uniform. The width of the connection section is decreased depending on the wiring length so as to make the capacitance uniform.

Ultra-high resolution pixel electrode arrangement structure and signal processing method

Disclosed is a photoelectric conversion device having a multiplying function and an image sensing device using the same. The photoelectric conversion device essentially comprises three layered structure: a carrier generation/multiplication layer composed of amorphous silicon to have both the function of absorbing light and generating carriers through optical excitation and the function of multiplying the generated carriers; an electron injection inhibiting layer composed of an amorphous silicon carbide of the p-type conductivity to inhibit injection of electrons into the carrier generation/multiplication layer; and a hole injection inhibiting layer composed of an amorphous silicon nitride of the n-type conductivity to inhibit injection of holes into the carrier generation/multiplication layer. The said carrier generation/multiplication layer is provided between said electron injection inhibiting layer and said hole injection inhibiting layer.

Photoelectric conversion device and solid-state image sensing device using the same

This invention provides a composite having a hydrophilic film made of amorphous titanium oxide. A film is deposited on a substrate made of, for example, glass or synthetic resin. The film is composed of amorphous titanium oxide partially having structures in which a network of Ti&mdash;O&mdash;Ti bond is broken to give Ti&mdash;OH bond terminals.

Composite and manufacturing method therefor

A high quality transparent SiC thin film can be deposited on the surface of a plastic material at low temperature utilizing Electron Cyclotron Resonance (ECR) Plasma CVD techniques, thereby enhancing surfacial hardness without spoiling designability. A magnetic field is applied to a plasma generating chamber by means of a surrounding magnetic coil. Microwaves are then introduced into the plasma generating chamber. Further, an upstream gas is introduced into the plasma generating chamber. ECR plasma is thus generated. A downstream gas is then supplied to the chamber from an inlet. Furthermore, the ECR plasma is passed through a mesh placed between the inlet and a polymer base material or between the plasma generating chamber and the inlet. Accordingly, a SiC film is deposited on a surface of a polymer base material.

Method and apparatus for forming SiC thin film on high polymer base material by plasma CVD

A method of depositing a thin film on a polymer substrate by plasma CVD comprises applying a magnetic field to a plasma generating chamber by activating a magnetic coil placed in the circumference of the plasma generating chamber, the plasma generating chamber having an inlet; introducing a microwave into the plasma generating chamber; introducing an upstream gas into the plasma generating chamber wherein an ECR plasma is generated; vaporizing a feed gas wherein a supply gas is generated and carries the ECR plasma; passing said ECR plasma through a mesh provided between the inlet and a polymer substrate located downstream of the inlet; and depositing a film on the surface of the polymer substrate.

Methods of depositing films on polymer substrates

A control electrode portion for passing electrons through a given electron-passing hole selected from a plurality of electron-passing holes provided on an insulating substrate is formed by coating the insulating substrate with a conductive film and dividing the into a plurality of conductive films as control electrodes. This structure obviates the mesh structure of electrons which are necessary in the case of arranging control electrodes on the insulating substrate, thereby realizing high-definition display devices with improved luminance. In addition, planar display devices provided with a surface insulated substrate produced by forming an insulating film on a conductive substrate having electron-passing holes and a plurality of separate control electrodes arranged on the surface insulated substrate, it is possible to prevent the charge-up effect which obstructs the passage of electron beams and, hence, to enhance the luminance at least by (1) providing a voltage applying circuit for applying a predetermined voltage to the conductive substrate, (2) providing a portion at which the conductive substrate is exposed between the adjacent control electrodes.

Planar display apparatus having exposed insulated substrate portion

Planar display devices which have a small thickness and used as a display unit of a television set, a monitor or the like. A control electrode portion for passing electrons through a given electron-passing hole selected from a plurality of electron-passing holes provided on an insulating substrate is formed by coating the insulating substrate with a conductive film and dividing them into a plurality of conductive films as control electrodes. This structure obviates the mesh structure of electrons which are necessary in the case of arranging control electrodes on the insulating substrate, thereby realizing high-definition display devices with improved luminance. In addition, planar display devices provided with a surface insulated substrate produced by forming an insulating film on a conductive substrate having electron-passing holes and a plurality of separate control electrodes arranged on the surface insulated substrate, it is possible to prevent the charge-up effect which obstructs the passage of electron beams and, hence, to enhance the luminance by (1) providing a voltage applying means for applying a predetermined voltage to the conductive substrate, (2) providing a portion at which the conductive substrate is exposed between the adjacent control electrodes, and so on.

Growing community of inventors

Hamamatsu, Japan

Yoshinori Hatanaka