Yoshinobu, Japan

Yoshinobu Tanada

This inventor holds 1 USPTO granted patent. Top assignee: Toshiba Ceramics Co., Ltd.. Active years: 1990.

IDiyas Innovation Intelligence. (2026). Inventor Profile: Yoshinobu Tanada. Retrieved from https://idiyas.com/inventor/yoshinobu-tanada

Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile

Calculating rank

% Patents Active = 100.0

Average Co-Inventor Count = 3.0

ph-index = 1

Forward Citations = 6(Granted Patents)


Company Filing History:


Years Active: 1990

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1 patent (USPTO):Explore Patents

Title: Innovations of Yoshinobu Tanada

Introduction

Yoshinobu Tanada is a notable inventor based in Yoshinobu, Japan. He has made significant contributions to the field of semiconductor technology. His work has led to the development of innovative solutions that enhance the performance and reliability of semiconductor elements.

Latest Patents

One of Yoshinobu Tanada's key patents is for a heat-treatment member for semiconductor elements. This invention features a Si-SiC body with a SiO₂ coating that covers the surface of the Si-SiC body. The SiO₂ coating has a thickness ranging between 20 Å and 100,000 Å. This innovation is crucial for improving the heat treatment processes in semiconductor manufacturing.

Career Highlights

Yoshinobu Tanada is associated with Toshiba Ceramics Co., Ltd., where he has been instrumental in advancing semiconductor technologies. His expertise in materials science and engineering has allowed him to develop solutions that address critical challenges in the industry.

Collaborations

Yoshinobu has collaborated with notable colleagues such as Shuitsu Matsuo and Yasumi Sasaki. Their combined efforts have contributed to the success of various projects within the semiconductor field.

Conclusion

Yoshinobu Tanada's contributions to semiconductor technology through his innovative patents and collaborations highlight his importance in the field. His work continues to influence advancements in semiconductor manufacturing processes.

Profile summary based on public USPTO records.
Data Sources: USPTO Patent Grant XML, Patent Center, EPO & CIPO • Normalized by IDiyas Innovation Graph. Methodology & provenance architecturePlease report any incorrect information to [email protected]
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