Yoshinari Uetake

Title: Innovations of Yoshinari Uetake

Introduction

Yoshinari Uetake is a prominent inventor based in Sagamihara, Japan. He has made significant contributions to the field of semiconductor technology, holding a total of six patents. His work focuses on methods that enhance the performance and reliability of semiconductor devices.

Latest Patents

One of Uetake's latest patents involves a method of making a semiconductor device with high withstand voltage. In this innovative process, phosphorus is doped into one of the major surfaces of an n-type silicon semiconductor substrate, while boron is doped into the other major surface. The structure is then diffused into the surface regions of the substrate at high temperatures for an extended period. This results in the formation of an n-buffer layer on the first major surface and a p-base layer on the second major surface. Additionally, n-type impurities are diffused into the p-base layer to create an n-emitter layer, while p-type impurities are diffused into the n-buffer layer to selectively form a p-emitter layer. Further diffusion of n-type impurities into the n-buffer layer leads to the formation of an n-type anode short layer.

Career Highlights

Yoshinari Uetake is associated with Kabushiki Kaisha Toshiba, a leading company in the technology sector. His work at Toshiba has allowed him to develop and refine his innovative methods in semiconductor manufacturing. Uetake's contributions have played a crucial role in advancing the capabilities of semiconductor devices.

Collaborations

Uetake has collaborated with notable coworkers, including Yoshio Yokota and Kazuo Watanuki. These partnerships have fostered a collaborative environment that encourages innovation and the sharing of ideas.

Conclusion

Yoshinari Uetake's work in semiconductor technology exemplifies the spirit of innovation. His patents and contributions continue to influence the industry, paving the way for future advancements in semiconductor devices.