Hwaseong-si, South Korea

Yoshinao Harada


Average Co-Inventor Count = 6.2

ph-index = 1

Forward Citations = 2(Granted Patents)


Company Filing History:


Years Active: 2017-2025

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3 patents (USPTO):Explore Patents

Title: Innovations of Yoshinao Harada

Introduction

Yoshinao Harada is a prominent inventor based in Hwaseong-si, South Korea. He has made significant contributions to the field of semiconductor technology, holding two patents that showcase his innovative approach to device manufacturing.

Latest Patents

Harada's latest patents include a semiconductor device that features a unique arrangement of cells and fin structures. This device comprises first to fourth cells sequentially disposed on a substrate, with first to third diffusion break structures. The first fin structure protrudes from the substrate and includes first to fourth fins, while a second fin structure, spaced apart from the first, comprises fifth to eighth fins. Notably, the number of fins in one cell differs from that in another cell. Additionally, he has developed methods for manufacturing semiconductor devices that involve plasma annealing and the application of a threshold voltage control gas. This process allows for the formation of a fixed charge region on the substrate, facilitating easier control of the threshold voltage in MOS transistors.

Career Highlights

Yoshinao Harada is currently employed at Samsung Electronics Co., Ltd., a leading company in the electronics industry. His work focuses on advancing semiconductor technologies, which are crucial for modern electronic devices.

Collaborations

Harada has collaborated with notable colleagues, including Shigenobu Maeda and Sung Chul Park, contributing to the innovative projects at Samsung Electronics.

Conclusion

Yoshinao Harada's contributions to semiconductor technology through his patents and work at Samsung Electronics highlight his role as a key innovator in the field. His advancements continue to influence the development of modern electronic devices.

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