The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Feb. 21, 2017
Filed:
Feb. 03, 2015
Applicant:
Samsung Electronics Co., Ltd., Suwon-si, KR;
Inventors:
Keun-Hwi Cho, Seoul, KR;
Dong-Won Kim, Seongnam-si, KR;
Yoshinao Harada, Hwaseong-si, KR;
Myung-Gil Kang, Seoul, KR;
Jae-Young Park, Yongin-si, KR;
Assignee:
Samsung Electronics Co., Ltd, , KR;
Attorney:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
H01L 29/66 (2006.01); H01L 21/265 (2006.01); H01L 21/324 (2006.01); H01L 21/8238 (2006.01); H01L 21/84 (2006.01);
U.S. Cl.
CPC ...
H01L 29/66803 (2013.01); H01L 21/26513 (2013.01); H01L 21/324 (2013.01); H01L 21/823821 (2013.01); H01L 21/845 (2013.01); H01L 29/66537 (2013.01); H01L 29/66545 (2013.01); H01L 29/66795 (2013.01);
Abstract
In a method of manufacturing a semiconductor device, a plasma annealing and supplying a threshold voltage control gas onto a portion of a substrate is performed to form a fixed charge region including a fixed charge at a surface of the substrate. A MOS transistor is formed on the substrate including the fixed charge region. By the above processes, the threshold voltage of the MOS transistor may be easily controlled.