Takasaki, Japan

Yoshikazu Iida

This inventor holds 1 USPTO granted patent. Top assignee: Hitachi, Ltd.. Active years: 1995.

IDiyas Innovation Intelligence. (2026). Inventor Profile: Yoshikazu Iida. Retrieved from https://idiyas.com/inventor/yoshikazu-iida-cghz6vgh

Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile

Calculating rank

% Patents Active = 100.0

Average Co-Inventor Count = 4.0

ph-index = 1


Company Filing History:


Years Active: 1995

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1 patent (USPTO):Explore Patents

Title: Yoshikazu Iida and His Semiconductor Memory Device

Introduction

Yoshikazu Iida is an inventor associated with Takasaki, Japan, and Hitachi, Ltd. His patent work includes an approach to improving the access speed of semiconductor memory devices.

Latest Patents

Iida is credited with 1 patent: “Semiconductor Memory Device.” The invention sends data read from a memory cell on complementary or common data lines directly to an output circuit, bypassing a sense amplifier. By removing the sense amplifier’s delay from the address access time, the design aims to provide faster access than conventional memory devices that use a sense amplifier.

Career Highlights

Iida’s listed patent reflects work on semiconductor memory architecture and reducing delays in data output. The available information associates his work with Hitachi, Ltd.

Collaborations

Kinya Mitsumoto and Hiroki Miyashita are identified as Iida’s coworkers.

Conclusion

Yoshikazu Iida’s patent describes a direct data-output approach intended to shorten semiconductor memory access time, highlighting his contribution to memory-device innovation.

Profile summary based on public USPTO records.
Data Sources: USPTO Patent Grant XML, Patent Center, EPO & CIPO • Normalized by IDiyas Innovation Graph. Methodology & provenance architecturePlease report any incorrect information to [email protected]
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