Tokyo, Japan

Yoshiji Kobayashi

This inventor holds 2 USPTO granted patents. Top assignee: Nippon Telegraph and Telephone Corporation. Active years: 1988-1991.

IDiyas Innovation Intelligence. (2026). Inventor Profile: Yoshiji Kobayashi. Retrieved from https://idiyas.com/inventor/yoshiji-kobayashi

Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile

Calculating rank

% Patents Active = 100.0

Average Co-Inventor Count = 2.0

ph-index = 2

Forward Citations = 22(Granted Patents)


Company Filing History:


Years Active: 1988-1991

Loading Chart...
2 patents (USPTO):Explore Patents

Title: The Innovations of Yoshiji Kobayashi

Introduction

Yoshiji Kobayashi is a prominent inventor based in Tokyo, Japan. He has made significant contributions to the field of semiconductor technology. His work has led to the development of innovative devices that enhance electronic performance.

Latest Patents

Kobayashi holds 2 patents, with his latest invention being a bipolar transistor and the method of manufacturing the same. This bipolar transistor includes collector, base, and emitter regions. The collector region consists of a first semiconductor region of a first conductivity type, formed in contact with a surface of a semiconductor layer. The base region consists of a second semiconductor region of a second conductivity type, formed within the collector region to be in contact with the surface of the semiconductor layer. The emitter region consists of a third semiconductor region of the first conductivity type, formed within the base region to be in contact with the surface of the semiconductor layer. The transistor also includes collector, base, and emitter electrodes. The collector and base electrodes are connected to the collector and base regions at opposite edges of a single opening formed in a field insulating film covering the surface of the semiconductor layer. The collector and base electrodes consist of a conductor, while the emitter electrode is connected to the emitter region and also consists of a conductor. The transistor further includes first and second insulating interlayers, with the first insulating interlayer formed between the collector and emitter electrodes, and the second insulating interlayer formed between the emitter and base electrodes. A distance between the collector and emitter electrodes on the surface of the semiconductor layer is substantially the same as that between the emitter and base electrodes.

Career Highlights

Kobayashi is associated with Nippon Telegraph and Telephone Corporation, where he has been able to apply his innovative ideas in a practical setting. His work has been instrumental in advancing semiconductor technology.

Collaborations

He has collaborated with notable coworkers, including Tetsuchi Sakai and Tetsushi Sakai, contributing to various projects that push the boundaries of technology.

Conclusion

Yoshiji Kobayashi's contributions to the field of semiconductor technology through his patents and collaborations highlight his role as a key innovator in the industry. His work continues to influence advancements in electronic devices.

Profile summary based on public USPTO records.
Data Sources: USPTO Patent Grant XML, Patent Center, EPO & CIPO • Normalized by IDiyas Innovation Graph. Methodology & provenance architecturePlease report any incorrect information to [email protected]
Loading…