Nara, Japan

Yoshihiro Todokoro

This inventor holds 1 USPTO granted patent. Top assignee: Nara Institute of Science and Technology. Active years: 2015.

IDiyas Innovation Intelligence. (2026). Inventor Profile: Yoshihiro Todokoro. Retrieved from https://idiyas.com/inventor/yoshihiro-todokoro-ix2evasg

Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile

Calculating rank

% Patents Active = 100.0

Average Co-Inventor Count = 3.0

ph-index = 1

Forward Citations = 1(Granted Patents)


Company Filing History:


Years Active: 2015

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1 patent (USPTO):Explore Patents

Title: Innovations of Yoshihiro Todokoro in Semiconductor Technology

Introduction

Yoshihiro Todokoro is a prominent inventor based in Nara, Japan. He has made significant contributions to the field of semiconductor technology, particularly in the development of SiC (Silicon Carbide) semiconductor elements. His innovative work focuses on enhancing carrier mobility through advanced manufacturing methods.

Latest Patents

Yoshihiro Todokoro holds a patent for a SiC semiconductor element and its manufacturing method. This patent introduces a technology that simplifies the formation of a specific crystal surface, namely the {03-38} surface, which is known for its high carrier mobility in trench sidewalls. The invention details a trench structure formed in a (0001) surface or an off-oriented surface of a (0001) surface with an offset angle of 8° or lower. The channel member is integrated within this trench structure, ensuring that at least 90% of the channel member's area is a {03-38} surface or a surface offset by an angle from -8° to 8° in the <1-100> direction. The trench sidewalls are finished to {03-38} surfaces through thermal etching conducted in a chlorine atmosphere at temperatures above 800°C, using nitrogen gas as the carrier.

Career Highlights

Yoshihiro Todokoro is affiliated with the Nara Institute of Science and Technology, where he continues to advance research in semiconductor technologies. His work has garnered attention for its potential applications in various electronic devices, enhancing performance and efficiency.

Collaborations

Yoshihiro has collaborated with notable colleagues, including Tomoaki Hatayama and Hidenori Koketsu. Their joint efforts contribute to the ongoing research and development in the semiconductor field.

Conclusion

Yoshihiro Todokoro's innovative contributions to SiC semiconductor technology highlight his role as a leading inventor in the industry. His patent reflects a significant advancement in manufacturing methods that could influence future electronic applications.

Profile summary based on public USPTO records.
Data Sources: USPTO Patent Grant XML, Patent Center, EPO & CIPO • Normalized by IDiyas Innovation Graph. Methodology & provenance architecturePlease report any incorrect information to [email protected]
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