Yokohama, Japan

Yoshihiro Sekizawa

This inventor holds 1 USPTO granted patent. Top assignee: Fujitsu Semiconductor Limited. Active years: 2014.

IDiyas Innovation Intelligence. (2026). Inventor Profile: Yoshihiro Sekizawa. Retrieved from https://idiyas.com/inventor/yoshihiro-sekizawa

Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile


Average Co-Inventor Count = 3.0

ph-index = 1


Company Filing History:


Years Active: 2014

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1 patent (USPTO):Explore Patents

Title: Innovations of Yoshihiro Sekizawa

Introduction

Yoshihiro Sekizawa is a notable inventor based in Yokohama, Japan. He has made significant contributions to the field of semiconductor technology. His work has led to the development of innovative solutions that enhance the performance of electronic devices.

Latest Patents

Yoshihiro Sekizawa holds 1 patent for a contactor that includes a covalent bond layer. This contactor features a base material made of a first material and a conductor film made of a second material. The conductor film is specifically designed to be formed only on the contact surface with an electrode of a semiconductor apparatus at the tip of the contactor film.

Career Highlights

Yoshihiro Sekizawa is currently employed at Fujitsu Semiconductor Limited, where he continues to push the boundaries of semiconductor technology. His expertise and innovative mindset have made him a valuable asset to the company.

Collaborations

Throughout his career, Yoshihiro has collaborated with talented individuals such as Shigeyuki Maruyama and Tomohiro Suzuka. These collaborations have fostered a creative environment that has led to groundbreaking advancements in their field.

Conclusion

Yoshihiro Sekizawa's contributions to semiconductor technology exemplify the spirit of innovation. His patent for a contactor with a covalent bond layer showcases his commitment to enhancing electronic device performance. His work continues to inspire future advancements in the industry.

Profile summary based on public USPTO records.
Data Sources: USPTO Patent Grant XML, Patent Center, EPO & CIPO • Normalized by IDiyas Innovation Graph. Methodology & provenance architecturePlease report any incorrect information to [email protected]
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