Yoshihiro Okusa

Title: Innovations by Yoshihiro Okusa

Introduction

Yoshihiro Okusa is a notable inventor based in Nobeoka, Japan. He has made significant contributions to the field of semiconductor technology, holding two patents that showcase his innovative approach to device production.

Latest Patents

One of his latest patents involves a semiconductor device and its production method. This invention describes a process on a silicon substrate where a silicon oxide film is applied. A polycrystalline silicon film is then formed using a low-pressure CVD method at a monosilane partial pressure of no more than 10 Pa and a film formation temperature of no lower than 600°C. The polycrystalline silicon film is doped with an impurity, such as phosphorus, at a concentration ranging from 1×10²⁰ atoms/cm³ to 1×10²¹ atoms/cm³, resulting in a phosphosilicate glass film. After the removal of this film, the polycrystalline silicon undergoes thermal oxidation in an oxidative atmosphere to create a dielectric film on its surface. An additional polycrystalline silicon film is formed on this dielectric layer, treated as an oriented polycrystalline silicon film. This oriented film serves as both the upper and lower electrodes, enabling the creation of a semiconductor device with a capacitor. Furthermore, this method allows for the rapid production of a thin film transistor with high dielectric strength.

Career Highlights

Yoshihiro Okusa is currently associated with Asahi Kasei Microsystems Co., Ltd., where he continues to innovate in semiconductor technology. His work has been instrumental in advancing the capabilities of semiconductor devices, particularly in enhancing their efficiency and performance.

Collaborations

He collaborates with Tatsuya Yamauchi, contributing to the development of cutting-edge technologies in their field.

Conclusion

Yoshihiro Okusa's contributions to semiconductor technology through his patents reflect his innovative spirit and dedication to advancing the industry. His work continues to influence the development of efficient semiconductor devices.