The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Nov. 13, 2001
Filed:
Feb. 25, 2000
Yoshihiro Okusa, Nobeoka, JP;
Tatsuya Yamauchi, Nobeoka, JP;
Asahi Kasei Microsystems Co., Ltd., Tokyo, JP;
Abstract
On a silicon substrate,is provided a silicon oxide film,, on which a polycrystalline silicon film,is formed by a low pressure CVD method at a monosilane partial pressure of no more than 10 Pa and a film formation temperature of no lower than 600° C. The polycrystalline silicon film is doped with an impurity such as phosphorus in a concentration of 1×10,atoms/cm,to 1×10,atoms/cm,to form a phosphosilicate glass film,, and after removing it, the polycrystalline silicon film is thermally oxidized in an oxidative atmosphere to form a dielectric film,on the surface. A polycrystalline silicon film,is formed on the dielectric film,, which is treated as the oriented polycrystalline silicon film,to form an oriented polycrystalline silicon film,. The oriented polycrystalline silicon film,as an upper electrode and the oriented polycrystalline silicon film,as a lower electrode are wired to obtain a semiconductor device having a capacitor. Further, a thin film transistor of a high dielectric strength can be produced in a short time on the polycrystalline silicon which is oriented in a short time.