Yoshihiro Irokawa

Title: Innovations in Semiconductor Technology: The Contributions of Yoshihiro Irokawa

Introduction

Yoshihiro Irokawa is a notable inventor based in Tsukuba, Japan, whose work significantly contributes to the field of semiconductor technology. With a focus on the development of high-performance diodes, Irokawa has made advancements that hold promise for various applications in electronics.

Latest Patents

Irokawa holds a patent for an AlN single crystal Schottky barrier diode and the method of producing the same. The invention outlines an AlN single crystal substrate that exhibits a defect density of 10 cm or less and a thickness of 300 μm or more. This diode boasts impressive rectifying properties, with an on-off ratio at the time of applying 10 V and -40 V of at least 10, even at a high temperature of 573 K. Additionally, it has a high voltage resistance, allowing voltage application within the range of -40 V to 10 V, and a low on-resistance characteristic such that current begins to flow at no greater than 5 V.

Career Highlights

Yoshihiro Irokawa works at the National Institute for Materials Science, where he engages in research and development of advanced materials. His innovative spirit and technical expertise have positioned him as a key player in the field, elevating the standards for semiconductor devices.

Collaborations

Throughout his career, Irokawa has collaborated with esteemed colleagues such as Kiyoshi Shimamura and Encarnacion Antonia Garcia Villora. Their combined expertise enriches the research conducted at the National Institute for Materials Science, facilitating breakthroughs in the semiconductor domain.

Conclusion

Yoshihiro Irokawa’s contribution to the development of the AlN single crystal Schottky barrier diode highlights his role as a pioneer in semiconductor technology. His innovations pave the way for improved electronic devices, showcasing the impact of dedicated research and collaboration in advancing technology.