The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Nov. 17, 2015
Filed:
Jan. 30, 2013
National Institute for Materials Science, Tsukuba-shi, Ibaraki, JP;
Yoshihiro Irokawa, Tsukuba, JP;
Kiyoshi Shimamura, Tsukuba, JP;
Encarnacion Antonia Garcia Villora, Tsukuba, JP;
NATIONAL INSTITUTE FOR MATERIALS SCIENCE, Tsukuba-shi, Ibaraki, JP;
Abstract
An AlN single crystal Schottky barrier diode including: an AlN single crystal substrate having a defect density of 10cmor less and a thickness of 300 μm or more; a first electrode formed on one surface of the AlN single crystal substrate; and a second electrode formed on one surface of the AlN single crystal substrate while being spaced apart from the first electrode, the AlN single crystal Schottky barrier diode being provided with: a rectifying property such that an on-off ratio at the time of applying 10 V and −40 V is at least 10even at a high temperature of 573 K; a high voltage resistance such that a voltage can be applied at least within a range of −40 V to 10 V; and a low on-resistance characteristic such that a current begins to flow at no greater than 5 V.