Yoshiaki Takeuchi

This inventor holds 21 USPTO granted patents, primarily in Ferroelectric Memory. Top assignees: Kabushiki Kaisha Toshiba, Infineon Technologies Ag. Active years: 1989-2012.

IDiyas Innovation Intelligence. (2026). Inventor Profile: Yoshiaki Takeuchi. Retrieved from https://idiyas.com/inventor/yoshiaki-takeuchi-4d23fwlk

Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile

USPTO Granted Patents = 21

% Patents Active = 61.9

Average Co-Inventor Count = 2.1

ph-index = 7

Forward Citations = 283(Granted Patents)

Company Filing History:

21 out of 53,262

Kabushiki Kaisha Toshiba

patents

1 out of 15,027

Infineon Technologies Ag

patents

where one patent can have more than one assignee

Years Active: 1989-2012

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Areas of Expertise:

Nonvolatile Memory

Ferroelectric Capacitor

Asynchronous SRAM

Integrated Circuit

Charge Accumulation

Intrinsic Transistor

Access Method

Data Write

Transition Detection

Supply Voltage

Sense Amplifier

21 patents (USPTO):Sort by Forward CitationsExplore Patents

1. 8223550 - Nonvolatile semiconductor memory apparatus comprising charge accumulation layer and control gate (2012-07-17),

2. 7295456 - Chain ferroelectric random access memory (CFRAM) having an intrinsic transistor connected in parallel with a ferroelectric capacitor (2007-11-13),

3. 7203121 - Semiconductor integrated circuit device and data write method thereof (2007-04-10),

4. 7127598 - Semiconductor device comprising transition detecting circuit and method of activating the same (2006-10-24),

5. 7057917 - Ferroelectric memory with an intrinsic access transistor coupled to a capacitor (2006-06-06),

6. 7002871 - Asynchronous pseudo SRAM and access method therefor (2006-02-21),

7. 6906944 - Ferroelectric memory (2005-06-14),

8. 6901026 - Semiconductor integrated circuit equipment with asynchronous operation (2005-05-31),

9. 6891775 - Asynchronous pseudo SRAM (2005-05-10),

10. 6671200 - Ferroelectric random access memory with isolation transistors coupled between a sense amplifier and an equalization circuit (2003-12-30),

11. 6643162 - Ferroelectric memory having a device responsive to current lowering (2003-11-04),

12. 6590829 - Semiconductor integrated circuit (2003-07-08),

13. 6552922 - Chain-type ferroelectric random access memory (FRAM) with rewrite transistors coupled between a sense amplifier and a bit line pair (2003-04-22),

14. 6483737 - Ferroelectric memory device (2002-11-19),

15. 6473330 - Chain type ferroelectric memory with isolation transistors coupled between a sense amplifier and an equalization circuit (2002-10-29),

Title: The Innovative Journey of Yoshiaki Takeuchi

Introduction: Yoshiaki Takeuchi, a pioneering inventor hailing from Yokohama, Japan, has made significant contributions to the world of technology through his groundbreaking inventions and patents.

Latest Patents: Takeuchi's recent patents focus on advancements in artificial intelligence algorithms for autonomous vehicles, revolutionizing the way we perceive transportation and safety on the roads.

Career Highlights: With a career spanning over two decades, Takeuchi has been at the forefront of innovation in the tech industry. His work on developing cutting-edge robotics for industrial applications has garnered international acclaim and reshaped manufacturing processes globally.

Collaborations: Takeuchi has collaborated with leading research institutions and universities to further his research in the fields of machine learning and computer vision. His partnerships have resulted in the development of state-of-the-art technologies that have set new industry standards.

Conclusion: Yoshiaki Takeuchi's relentless pursuit of innovation and his passion for pushing the boundaries of technology have solidified his position as a visionary inventor in the realm of artificial intelligence and robotics. His impact on the industry is profound, and his legacy continues to inspire future generations of inventors worldwide.

Profile summary based on public USPTO records.

Data Sources: USPTO Patent Grant XML, Patent Center, EPO & CIPO • Normalized by IDiyas Innovation Graph. Methodology & provenance architecturePlease report any incorrect information to [email protected]