Yoshiaki Banba

Title: Yoshiaki Banba: Innovator in Silicon Crystal Growth

Introduction

Yoshiaki Banba is a notable inventor based in Urawa, Japan, recognized for his contributions to the field of silicon crystal growth. With a total of two patents to his name, Banba has made significant advancements in the methods and apparatuses used for growing silicon single crystals.

Latest Patents

Banba's latest patents include an "Apparatus for Growing Silicon Crystals" and a "Method and Apparatus for Growing Silicon Crystals." The apparatus patent describes a system that includes a crucible containing a silicon melt, a furnace, a pulling mechanism, and a cooling shell. This innovative design allows for the cooling of the silicon single crystal from a temperature of 1,050°C to 850°C in no more than 140 minutes. Additionally, the method patent outlines a process for immersing a seed crystal in a silicon melt and pulling it to grow a silicon single crystal, ensuring that the dwelling time in the critical temperature range is also limited to 140 minutes.

Career Highlights

Throughout his career, Yoshiaki Banba has worked with prominent companies such as Mitsubishi Kinzoku Kabushiki Kaisha and Japan Silicon Co., Ltd. His experience in these organizations has contributed to his expertise in silicon crystal technology and innovation.

Collaborations

Banba has collaborated with notable coworkers, including Ichiro Yamashita and Koutaro Shimizu. These partnerships have likely fostered a creative environment that has led to advancements in their respective fields.

Conclusion

Yoshiaki Banba's work in the field of silicon crystal growth showcases his innovative spirit and dedication to advancing technology. His patents reflect a commitment to improving the efficiency and quality of silicon crystal production.