Munich, Germany

York C Gerstenmaier


Average Co-Inventor Count = 2.3

ph-index = 2

Forward Citations = 22(Granted Patents)


Company Filing History:


Years Active: 1994-1996

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3 patents (USPTO):Explore Patents

Title: Innovations by York C Gerstenmaier

Introduction

York C Gerstenmaier is a notable inventor based in Munich, Germany. He has made significant contributions to the field of semiconductor technology, holding a total of 3 patents. His work focuses on controllable power semiconductor components, which are essential in various electronic applications.

Latest Patents

Gerstenmaier's latest patents include a method for the manufacture of controllable power semiconductor elements. These components, such as IGBTs and thyristors, feature a relatively lightly doped n-buffer zone, a flat p-emitter, and an n-base with a long charge carrier life expectancy. This design results in a temperature-independent tail current, despite maintaining a low on-state DC resistance and a high blocking voltage. Another patent addresses controllable power semiconductor elements with a buffer zone, emphasizing similar advantages in performance and efficiency.

Career Highlights

York C Gerstenmaier is currently associated with Siemens Aktiengesellschaft, a leading global technology company. His work at Siemens has allowed him to push the boundaries of semiconductor technology and contribute to advancements in the field.

Collaborations

Throughout his career, Gerstenmaier has collaborated with esteemed colleagues such as Heinrich Brunner and Klaus-Guenter Oppermann. These partnerships have fostered innovation and have been instrumental in the development of new technologies.

Conclusion

York C Gerstenmaier's contributions to semiconductor technology through his patents and collaborations highlight his role as a significant inventor in the industry. His work continues to influence advancements in electronic components and systems.

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