Tel Aviv, Israel

Yoram Dagan

This inventor holds 1 USPTO granted patent and 1 EPO patent. Top assignee: Tel Aviv University. Active years: 2021.


% Patents Active = 100.0

 

Average Co-Inventor Count = 4.0

ph-index = 1


Company Filing History:


Years Active: 2021

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1 patent (USPTO):Explore Patents

Title: Yoram Dagan: Innovator in Heterostructure Systems

Introduction

Yoram Dagan is a prominent inventor based in Tel Aviv, Israel. He has made significant contributions to the field of materials science, particularly in the development of heterostructure systems. His innovative approach has led to advancements in the fabrication of crystalline layers, which are essential for various applications in electronics and optoelectronics.

Latest Patents

Yoram Dagan holds a patent for a "Heterostructure system and method of fabricating the same." This patent describes a method of fabricating a heterostructure system by epitaxially growing a crystalline layer of a first substance on a crystalline base layer through surface catalysis in a solution. The growth process is self-terminated once a monolayer of the substance is formed on the base layer. This innovative technique enhances the efficiency and quality of heterostructure systems.

Career Highlights

Yoram Dagan is affiliated with Tel Aviv University, where he conducts research and develops new technologies. His work has garnered attention in the scientific community, and he is recognized for his expertise in materials science and engineering. His contributions have paved the way for further research and development in the field.

Collaborations

Yoram has collaborated with notable colleagues, including Gil Markovich and Alon Ron. These partnerships have fostered a collaborative environment that encourages innovation and the sharing of ideas.

Conclusion

Yoram Dagan's work in heterostructure systems exemplifies the impact of innovative research in materials science. His patent and collaborations highlight his commitment to advancing technology in this critical field.

Profile summary based on public USPTO records.
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