Yoosang Hwang

Title: Yoosang Hwang: Innovator in Ferroelectric Technology

Introduction

Yoosang Hwang is a notable inventor based in Yongin, South Korea. He has made significant contributions to the field of ferroelectric materials, particularly through his innovative patent related to high-temperature electrode-barriers.

Latest Patents

Hwang holds a patent for a technology titled "High temperature electrode-barriers for ferroelectric and other." This invention involves a capacitor designed for use on silicon or other substrates, featuring a multilayer electrode structure. The bottom electrode consists of a bottom layer of Pt-Rh-O.sub.x, an intermediate layer of Pt-Rh, and a top layer of Pt-Rh-O.sub.x. A ferroelectric material, such as PZT, is placed on the bottom electrode, with a top electrode of identical composition situated on the opposite side of the ferroelectric material. This innovative design enhances the performance and reliability of capacitors in various applications.

Career Highlights

Throughout his career, Yoosang Hwang has worked with prominent organizations, including Sharp Corporation and Virginia Tech Intellectual Properties, Inc. His experience in these companies has allowed him to refine his expertise in materials science and engineering.

Collaborations

Hwang has collaborated with notable professionals in his field, including Seshu B Desu and Hemanshu D Bhatt. These collaborations have contributed to the advancement of technology in ferroelectric materials.

Conclusion

Yoosang Hwang's contributions to the field of ferroelectric technology through his innovative patent demonstrate his commitment to advancing materials science. His work continues to influence the development of high-performance capacitors.