The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Aug. 04, 1998

Filed:

Dec. 06, 1996
Applicant:
Inventors:

Seshu B Desu, Blacksburg, VA (US);

Hemanshu D Bhatt, Blacksburg, VA (US);

Dilip P Vijay, Fremont, CA (US);

Yoosang Hwang, Yongin, KR;

Assignees:
Attorney:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
H01G / ;
U.S. Cl.
CPC ...
361305 ; 361511 ; 361313 ; 361322 ; 257295 ; 257306 ;
Abstract

A capacitor for use on silicon or other substrate has a multilayer electrode structure. In a preferred embodiment, a bottom electrode situated on the substrate has a bottom layer of Pt--Rh--O.sub.x, an intermediate layer of Pt--Rh, and a top layer of Pt--Rh--O.sub.x. A ferroelectric material such as PZT (or other material) is situated on the bottom electrode. A top electrode, preferably of identical composition as the bottom electrode, is situated on the opposite side of the ferroelectric from the bottom electrode.


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