This inventor holds 2 USPTO granted patents. Top assignee: Samsung Electronics Co., Ltd.. Active years: 2026.
Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile
Company Filing History:
Years Active: 2026
Title: Yoon Heo and Integrated Circuit Device Innovation.
Introduction
Yoon Heo is an inventor associated with Suwon, South Korea, and Samsung Electronics Co., Ltd. His patent work concerns integrated circuit device design and semiconductor structures.
Latest Patents
The provided information lists one patent for Heo: Integrated Circuit Devices. The invention describes fin-type active areas on a substrate, channel regions, and gate lines that surround the channels. It also describes source/drain regions containing semiconductor layers and at least one air gap. The design brings together these features in an integrated circuit device. Heo is credited with 1 patent in the supplied data.
Career Highlights
Heo’s listed patent reflects work in semiconductor device architecture, particularly the arrangement of fin-type active areas, gates, and source/drain regions. The supplied information identifies Samsung Electronics Co., Ltd. as his company.
Collaborations
Seokhoon Kim is identified as Heo’s coworker. The available details do not specify whether Kim collaborated on the patent.
Conclusion
Yoon Heo’s listed invention focuses on integrated circuit structure, including source/drain regions with air gaps, and is associated with his work at Samsung Electronics Co., Ltd.
Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile