This inventor holds 1 USPTO granted patent and 3 published patent applications. Top assignee: Industry-University Cooperation Foundation Hanyang University. Active years: 2014.
Company Filing History:
Years Active: 2014
Title: Innovations by Yoon Cheol Bae: A Look into His Contributions in Memory Technology
Introduction: Yoon Cheol Bae is an innovative inventor based in Gyeongsangnam-do, South Korea. With a focus on memory technology, he has made notable contributions to the field through his patent, which showcases his expertise and dedication to advancing technology.
Latest Patents: Yoon Cheol Bae holds a patent for a resistance-variable memory device, specifically a ReRAM (Resistive Random-Access Memory). His invention pertains to a non-volatile memory device that incorporates a unique production method. The core function of this device lies in a resistance-variable layer that alters resistance based on the applied pulse. This layer features a multilayered structure comprised of three oxide films, each with varying oxygen ratios in their compositions, enhancing the overall performance and reliability of the memory device.
Career Highlights: Yoon Cheol Bae currently works at the Industry-University Cooperation Foundation at Hanyang University. His role emphasizes collaboration between academic research and industrial applications, allowing for the exploration and development of innovative technologies. Bae's dedication to research and development is evident through his impactful work.
Collaborations: Throughout his career, Yoon Cheol Bae has collaborated with notable coworkers such as Jin Pyo Hong and Young Ho Do. Together, they contribute to the advancement of technology in the field of memory devices, sharing insights and expertise to push the boundaries of innovation.
Conclusion: Yoon Cheol Bae's contributions to the field of memory technology through his patented invention exemplify the spirit of innovation. With a strong foundation in both academic research and industrial application, he continues to pave the way for advancements in non-volatile memory devices, demonstrating the significant impact of inventors in shaping our technological future.